feb.1999 mitsubishi transistor modules QM500HA-H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders QM500HA-H ? i c collector current ........................ 500a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 93 10 18.5 25 27 26.5 f 6.5 m6 62 48 10 10 9 9 37.5 28 25 13.5 107 9 8 e 16 16 c bx be 24.5 7 13 4.5 32.2 35 b c bx e e m4 label
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 600 600 600 7 500 500 1780 10 5000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 640 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM500HA-H high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =500a, i b =0.67a Ci c =500a (diode forward voltage) i c =500a, v ce =2.5v v cc =300v, i c =500a, i b1 =1a, Ci b2 =10a transistor part diode part conductive grease applied typ. max. 5.0 5.0 500 2.5 3.5 1.8 3.0 10 3.5 0.07 0.25 0.04
feb.1999 1 10 0 10 ? 10 ? 10 1000 800 600 400 200 0 012345 t j =25? i b =200ma i b =2a i b =1a i b =0.5a 7 5 4 3 2 7 5 4 3 2 2.4 2.6 2.8 3.0 3.2 3.4 v ce =2.5v 1 10 t j =25? 0 10 ? 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 v ce =2.5v t j =25? t j =125? 2 10 3 10 4 10 5 10 0 10 1 10 2 10 3 10 444 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 i b =0.67a t j =25? t j =125? 444 v be(sat) v ce(sat) 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1 10 23457 2 10 23457 v cc =300v i b1 =1a ? b2 =10a t j =25? t j =125? t f t s t on ? 10 3 10 7 5 3 2 7 5 3 2 7 5 3 2 0 4 4 4 1 2 3 4 5 i c =100a t j =25? t j =125? i c =500a i c =300a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM500HA-H high power switching use insulated type
feb.1999 3 10 2 10 1 10 0 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 3 10 2 10 1600 0 0 200 400 600 800 800 100 300 500 700 1400 1200 1000 600 400 200 t j =125? i b2 =?a ?0a 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 v cc =300v i c =500a t j =25? t j =125? i b1 =1a t s t f 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 d.c. 10ms 1ms 100? 50? t c =25? 7 5 3 2 7 5 3 2 7 5 3 2 0 2.0 1.6 0.4 0.8 1.2 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0.08 0.06 0.04 0.02 0 444 7 5 3 24 0 10 1 10 non?epetitive collector dissipation second breakdown area 200ms switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM500HA-H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 ? 10 ? 10 ? 10 0 10 7 5 4 3 2 0 10 7 5 4 3 2 0 1000 2000 3000 4000 5000 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 0.25 0.20 0.15 0.10 0.05 0 444 7 5 3 24 0 10 1 10 surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) conduction time (cycles at 60hz) time (s) mitsubishi transistor modules QM500HA-H high power switching use insulated type z th (jCc) ( c/ w)
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